TY  - JOUR
TI  - Optical Properties of AlInN/AlN HEMTs in Detail
AB  - In this study, the optical properties of AlInN/AlN high electron mobility transistor (HEMT) structure, grown on c-oriented sapphire with Metal-Organic Chemical Vapor Deposition (MOCVD) technique, being investigated. Optical characterization is made Kubelka- Munk method. Transmittance, absorbance, and reflectance are investigated in detail. Also, the Kubelka-Munk theory is employed to determine the forbidden energy band gap of InN by using special functions. The energy band gap obtained by this method was compared.
AU  - öztürk, mustafa kemal
AU  - Ozcelik, Suleyman
AU  - BİLGİLİ, Ahmet Kürşat
AU  - Akpınar, Ömer
DO  - 10.31466/kfbd.954421
PY  - 2022
JO  - Karadeniz Fen Bilimleri Dergisi
VL  - 12
IS  - 2
SN  - 2564-7377
SP  - 521
EP  - 529
DB  - TRDizin
UR  - http://search/yayin/detay/1147153
ER  -