Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method

Neslihan TURAN (Gazi Üniversitesi, Fen Fakültesi, Fizik Bölümü, 06500, Yenimahalle, Ankara, Türkiye)
Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji
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Yıl: 2022 Cilt: 10 Sayı: 4 Sayfa Aralığı: 1059 - 1069 Metin Dili: İngilizce DOI: 10.29109/gujsc.1185766 İndeks Tarihi: 23-03-2023

Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method

Öz:
In this study, ZnO nanorods (ZnO-NR) were prepared on n-Si wafer by hydrothermal method. Structural and morphologic properties of ZnO nanostructures were investigated through XRD and SEM method. The illumination impacts on the current-voltage (I-V) measurements of the prepared Al/ZnO-NR/n-Si diode were explored in the dark and different illumination intensities (20–100 mW/cm2) between ± 1.5 V bias voltage range. The Schottky diode barrier height value had an increasing trend with increasing illumination intensity from 20 to 100 mW/cm2 while the ideality factor had a decreasing trend with the increase of photocurrent. The temporary photocurrent increases as illumination intensity increases. The slope (α) of the logI_ph-logP curve was obtained as 0.618 and this slope confirmed that this ZnO nanorod shows photoconducting behavior. The short-circuit current (I_sc) and open-circuit voltage (V_oc) values were obtained to be 774.08 μA and 0.24 V under 100 mW/cm2 illumination intensity, respectively. It was concluded that the prepared Al/ZnO-NR/n-Si diode can be used in the optoelectronic applications, especially for the photodiode industry.
Anahtar Kelime: Hydrothermal Zinc oxide Photovoltaic nanorod

Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
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APA GOKDEMIR TURAN N (2022). Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. , 1059 - 1069. 10.29109/gujsc.1185766
Chicago GOKDEMIR TURAN Neslihan Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. (2022): 1059 - 1069. 10.29109/gujsc.1185766
MLA GOKDEMIR TURAN Neslihan Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. , 2022, ss.1059 - 1069. 10.29109/gujsc.1185766
AMA GOKDEMIR TURAN N Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. . 2022; 1059 - 1069. 10.29109/gujsc.1185766
Vancouver GOKDEMIR TURAN N Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. . 2022; 1059 - 1069. 10.29109/gujsc.1185766
IEEE GOKDEMIR TURAN N "Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method." , ss.1059 - 1069, 2022. 10.29109/gujsc.1185766
ISNAD GOKDEMIR TURAN, Neslihan. "Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method". (2022), 1059-1069. https://doi.org/10.29109/gujsc.1185766
APA GOKDEMIR TURAN N (2022). Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji, 10(4), 1059 - 1069. 10.29109/gujsc.1185766
Chicago GOKDEMIR TURAN Neslihan Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji 10, no.4 (2022): 1059 - 1069. 10.29109/gujsc.1185766
MLA GOKDEMIR TURAN Neslihan Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji, vol.10, no.4, 2022, ss.1059 - 1069. 10.29109/gujsc.1185766
AMA GOKDEMIR TURAN N Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji. 2022; 10(4): 1059 - 1069. 10.29109/gujsc.1185766
Vancouver GOKDEMIR TURAN N Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method. Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji. 2022; 10(4): 1059 - 1069. 10.29109/gujsc.1185766
IEEE GOKDEMIR TURAN N "Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method." Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji, 10, ss.1059 - 1069, 2022. 10.29109/gujsc.1185766
ISNAD GOKDEMIR TURAN, Neslihan. "Photoresponse of the Al/n-Si Schottky Diode with Nanorod ZnO Interface Layer Prepared Using Hydrothermal Method". Gazi Üniversitesi Fen Bilimleri Dergisi Part C: Tasarım ve Teknoloji 10/4 (2022), 1059-1069. https://doi.org/10.29109/gujsc.1185766
Sayfa Oluşturulma Tarihi
24-04-2024 6:10

İLETİŞİM

TÜBİTAK ULAKBİM TR Dizin

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