TY  - JOUR
TI  - Illumination Response of Impedance Properties of Al/Gr-PVA/p-Si (MPS) Device
AB  - Admittance measurements including capacitance (C) and conductance (G) of Al/Gr-PVA/p-Si (MPS) device were made at 500 kHz and under dark and 200 mW/cm2 conditions. The illumination response on the electric characteristics of the device was investigated using the C-2-V characteristics. It was observed that the electronic parameters of the device changed depending on the illumination conditions. The doping concentration, Fermi energy and barrier height were obtained using the C-2-V data. The surface state (Nss) was also obtained using capacitance data. The results show that the device can be used as a photocapacitor.
AU  - Balbasi, Muzaffer
AU  - TATAROGLU, ADEM
AU  - Ata, Dilan
DO  - 10.54287/gujsa.1207057
PY  - 2023
JO  - Gazi University Journal of Science Part A: Engineering and Innovation
VL  - 10
IS  - 1
SN  - 2147-9542
SP  - 89
EP  - 96
DB  - TRDizin
UR  - http://search/yayin/detay/1161804
ER  -