Yıl: 2022 Cilt: 25 Sayı: 4 Sayfa Aralığı: 1613 - 1619 Metin Dili: İngilizce DOI: 10.2339/politeknik.787700 İndeks Tarihi: 06-04-2023

Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures

Öz:
In this study, three samples of GaN/AlInN/AlN/Al2O3 high electron mobility (HEMT) structures are investigated with high resolution X-ray diffraction (HR-XRD) technique. Peak positions and peak broadenings are used in calculations, gained from rocking curves. Structural quality is determined from symmetric and asymmetric peak planes. Mosaic defects such as treadening dilocations (TDs), tilt and twist angles, lateral and vertical crystallite lengths are determined by using Williamson Hall (WH) method. In addition to these, surface morphology is also investigated by atomic force microscopy (AFM). It is noticed that crystal quality of epitaxial layers decrease in the order of samples C, B and A. Al compositions for samples A, B and C are found as %87.4, %86.6 and %86.4, respectively by using Vegard’s law.
Anahtar Kelime: GaN AlInN AlN sapphire HEMT

GaN/AlInN/AlN/Safir HEMT Yapılar için Mozaik Kusur ve AFM Çalışması

Öz:
Bu çalışmada GaN/AlInN/AlN/Al2O3 yüksek elektron mobiliteli transistör (HEMT) yapıları üç numune olacak şekilde, yüksek çözünürlüklü X-ışınları kırınımı (HR-XRD) tekniği ile incelendi. Hesaplamalarda roking eğrilerinden elde edilen pik pozisyonları ve pik genişlemeleri kullanıldı. Yapısal kalite simetrik ve asimetrik pik düzlemlerinden faydalanılarak belirlendi. Tedirgin edici dislokasyonlar (TDs), eğim ve burkulma açıları, yanal ve düşey kristal uzunlukları gibi mozaik kusurlar Wiiliamson Hall (WH) metodu kullanılarak saptandı. Bunlara ilave olarak, yüzey morfolojisi atomik kuvvet mikroskopisi (AFM) yöntemiyle belirlendi. Epitaksiyel tabakaların kristal kalitesinin örnek C, B ve A sırasına göre düştüğü farkedildi. Örnekler A, B ve C için Al kompozisyonlarının sırasıyla %87.4, %86.6 ve %86.4 olduğu Vegard yasası kullanılarak belirlendi.
Anahtar Kelime:

Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
  • [1] Vickers M. E., Kappers M. J., Datta R., McAleese C., Smeeton T. M., Rayment F., Humphreys C. J., “In-plane imperfections in GaN studied by x-ray diffraction”, J. Phys. D: Appl. Phys. 38, A99, (2005).
  • [2] Awual R., Asiri M., Rahman M., Alharthi H., “Assessment of enhanced nitrite removal and monitoring using ligand modified stable conjugate materials”, Chemical Engineering Journal, 363: 64-72.
  • [3] Zheng H., Chen H., Yan Z., Han Y., Yu H., Li D., Huang Q., Zhou J., “Determination of twist angle of in-plane mosaic spread of GaN films by high-resolution X-ray diffraction”, J. Cryst. Growth 255, 63 (2003).
  • [4] Xing H., Keller S., Wu Y. F., McCarthy L., Smorchkova I. P., Buttari D.,Coffie R., Green D. S., Parish G., Heikman S., Shen L., Zhang N., Xu J. J., Keller B. P., DenBaars S. P., Mishra U. K., “Gallium nitride based transistors”, J. Phys. Cond. Matt.,13: 7139-7157 (2001).
  • [5] Dunn C. G., Koch E. F., “Comparison of dislocation densities of primary and secondary recrystallization grains of Si-Fe”, Acta Metall. 5: 548 (1957).
  • [6] Heikman S., Keller S., Wu Y., Speck J., DenBaars P., Mishra K., “Polarization effects in AlGaN/GaN and GaN/AlGaN/GaN heterostructures”, Journal of Applied Physics 93, 10114.
  • [7] Çörekçi, S. Öztürk M. K., Bengi A., Çakmak M., Özçelik S., Özbay E., “Characterization of an AlN buffer layer and a thick-GaN layer grown on sapphire substrate by MOCVD”, J. Mater. Sci. DOI 10.1007/s10853-010-4973-7, (2010).
  • [8] S. Çörekçi., M. K. Öztürk., B. Akaoğlu., M. Çakmak., S. Özçelik., E. Özbay., “Structural, morphological, and optical properties of AlGaN/GaN heterostructures with AlN buffer and interlayer”, J. Appl. Phys. 101, 123502, (2007).
  • [9] Çörekçi S., Usanmaz D., Tekeli Z., Çakmak M., Özçelik S., Özbay E., “Surface Morphology of Al0.3Ga0.7N/Al2O3-High Electron Mobility Transistor Structure”, J. Nanoscience and Nanotechnology. 8, 640-644, (2008).
  • [10] Ungár T., “Microstructural parameters from X-ray diffraction peak broadening”, Scripta Materialia, Volume 51, Issue 8, 2004, Pages 777-781,(2004).
  • [11] Nakamura N., Furuta K., Shen X., Kitamura T., Nakamura K., Okumura H., “Electrical properties of MBE-grown AlGaN/GaN HEMT structures by using 4H-SiC (0 0 0 1) vicinal substrates”, Journal of Crystal Growth 301–302 452–456, (2007).
  • [12] Mahanty S., Hao M., Sugahara T., Fareed Q., Morishima Y., Naoi Y., Wang T., Sakai S., “V-shaped defects in InGaN/GaN multiquantum wells”, Materials Letters 41, 67–71, (1999).
  • [13] Kapolnek D., Wu X., Heying B., Keller S., Mishra U., DenBaars S., Speck J., “ Structural evolution in epitaxial metalorganic chemical vapor deposition grown GaN films on sapphire”, Appl. Phys. Lett. 67:1541-1543, (1995).
APA BİLGİLİ A, Hkn E, öztürk m, Ozcelik S, Ozbay E (2022). Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. , 1613 - 1619. 10.2339/politeknik.787700
Chicago BİLGİLİ Ahmet Kürşat,Hkn Erkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. (2022): 1613 - 1619. 10.2339/politeknik.787700
MLA BİLGİLİ Ahmet Kürşat,Hkn Erkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. , 2022, ss.1613 - 1619. 10.2339/politeknik.787700
AMA BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. . 2022; 1613 - 1619. 10.2339/politeknik.787700
Vancouver BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. . 2022; 1613 - 1619. 10.2339/politeknik.787700
IEEE BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E "Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures." , ss.1613 - 1619, 2022. 10.2339/politeknik.787700
ISNAD BİLGİLİ, Ahmet Kürşat vd. "Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures". (2022), 1613-1619. https://doi.org/10.2339/politeknik.787700
APA BİLGİLİ A, Hkn E, öztürk m, Ozcelik S, Ozbay E (2022). Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi, 25(4), 1613 - 1619. 10.2339/politeknik.787700
Chicago BİLGİLİ Ahmet Kürşat,Hkn Erkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi 25, no.4 (2022): 1613 - 1619. 10.2339/politeknik.787700
MLA BİLGİLİ Ahmet Kürşat,Hkn Erkan,öztürk mustafa kemal,Ozcelik Suleyman,Ozbay Ekmel Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi, vol.25, no.4, 2022, ss.1613 - 1619. 10.2339/politeknik.787700
AMA BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022; 25(4): 1613 - 1619. 10.2339/politeknik.787700
Vancouver BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures. Politeknik Dergisi. 2022; 25(4): 1613 - 1619. 10.2339/politeknik.787700
IEEE BİLGİLİ A,Hkn E,öztürk m,Ozcelik S,Ozbay E "Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures." Politeknik Dergisi, 25, ss.1613 - 1619, 2022. 10.2339/politeknik.787700
ISNAD BİLGİLİ, Ahmet Kürşat vd. "Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures". Politeknik Dergisi 25/4 (2022), 1613-1619. https://doi.org/10.2339/politeknik.787700