TY  - JOUR
TI  - Mosaic Defect and AFM Study on GaN/AlInN/AlN/Sapphire HEMT Structures
AB  - In this study, three samples of GaN/AlInN/AlN/Al2O3 high electron mobility (HEMT) structures are investigated with high resolution X-ray diffraction (HR-XRD) technique. Peak positions and peak broadenings are used in calculations, gained from rocking curves. Structural quality is determined from symmetric and asymmetric peak planes. Mosaic defects such as treadening dilocations (TDs), tilt and twist angles, lateral and vertical crystallite lengths are determined by using Williamson Hall (WH) method. In addition to these, surface morphology is also investigated by atomic force microscopy (AFM). It is noticed that crystal quality of epitaxial layers decrease in the order of samples C, B and A. Al compositions for samples A, B and C are found as %87.4, %86.6 and %86.4, respectively by using Vegard’s law.
AU  - Ozbay, Ekmel
AU  - BİLGİLİ, Ahmet Kürşat
AU  - Hkn, Erkan
AU  - Ozcelik, Suleyman
AU  - öztürk, mustafa kemal
DO  - 10.2339/politeknik.787700
PY  - 2022
JO  - Politeknik Dergisi
VL  - 25
IS  - 4
SN  - 1302-0900
SP  - 1613
EP  - 1619
DB  - TRDizin
UR  - http://search/yayin/detay/1162388
ER  -