Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method
Yıl: 2023 Cilt: 9 Sayı: 1 Sayfa Aralığı: 93 - 99 Metin Dili: İngilizce DOI: 10.30855/gmbd.0705055 İndeks Tarihi: 25-05-2023
Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method
Öz: Due to its wide band gap value and large applications, tin dioxide $(SnO_2)$ is useful multifunctional material. In this study, SnO2 thin film was grown by the Successive Ionic Layer Adsorption and Reaction (SILAR) method for 40 cycles on the silver interdigital contact. Structural and morphological properties were investigated by XRD, SEM, and UV analysis. XRD analysis was taken using Cu Kα source in the range of 20- 80 two theta and it was observed that the crystal structure was formed. SEM analysis showed that the $SnO_2$ material grew homogeneously on the glass surface. The Tauc graph was plotted using the absorbance data. It was determined from the graph that the forbidden energy range was 3.81 eV. Urbach energy graph was also plotted which value was calculated as 0.46 eV. For electrical characterization, I-V and resistivity measurements were also taken depending on temperature by Keithley 2400 source meter and Lakeshore temperature controller. The temperature-dependent resistance graph was plotted. The temperature-dependent resistance graph showed that the resistivity decreased with increasing temperature. Activation energies were calculated by drawing the temperature-dependent Arhenius graph. The results showed that the $SnO_2$ thin film could be used in future electrical applications.
Anahtar Kelime: Öz:
Geniş bant aralığı değeri ve geniş uygulamaları nedeniyle kalay dioksit $(SnO_2)$ çok işlevli, kullanışlı bir malzemedir. Bu çalışmada, $SnO_2$ ince film, gümüş interdigital kontak üzerine 40 döngüde Ardışık İyonik Tabaka Adsorpsiyon ve Reaksiyon (SILAR) yöntemiyle büyütüldü. Yapısal ve morfolojik özellikler XRD, SEM ve UV analizleri ile incelendi. XRD analizi 20 ila 80 iki teta aralığında Cu Kα kaynak kullanılarak alındı ve kristal yapının oluştuğu gözlemlendi. SEM analizi SnO2 malzemesinin cam yüzey üzerine homojen biçimde büyüdüğünü gösterdi. Tauc grafiği, absorbans verileri kullanılarak çizildi. Grafikten yasak enerji aralığının 3.81 eV olduğu belirlendi. Urbach enerji grafiği çizildi ve Urbach enerji değeri 0.46 eV olarak hesaplandı. Elektriksel karakterizasyon için Keithley 2400 kaynak ölçer ve Lakeshore sıcaklık kontrolcüsü cihazı ile sıcaklığa bağlı olarak I-V ölçümleri yapıldı. Sıcaklığa bağlı direnç grafiği çizildi. Sıcaklığa bağlı direnç grafiği, artan sıcaklıkla direncin azaldığını gösterdi. Sıcaklığa bağlı Arhenius grafiği çizelerek aktivasyon enerjileri hesaplandı. Sonuçlar, $SnO_2$ ince filmin gelecekteki elektriksel uygulamalarda kulanılabilir olduğunu gösterdi.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Konferans Bildirisi Erişim Türü: Erişime Açık
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| APA | ÇORLU T, Acar S (2023). Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. , 93 - 99. 10.30855/gmbd.0705055 |
| Chicago | ÇORLU TUGBA,Acar Selim Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. (2023): 93 - 99. 10.30855/gmbd.0705055 |
| MLA | ÇORLU TUGBA,Acar Selim Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. , 2023, ss.93 - 99. 10.30855/gmbd.0705055 |
| AMA | ÇORLU T,Acar S Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. . 2023; 93 - 99. 10.30855/gmbd.0705055 |
| Vancouver | ÇORLU T,Acar S Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. . 2023; 93 - 99. 10.30855/gmbd.0705055 |
| IEEE | ÇORLU T,Acar S "Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method." , ss.93 - 99, 2023. 10.30855/gmbd.0705055 |
| ISNAD | ÇORLU, TUGBA - Acar, Selim. "Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method". (2023), 93-99. https://doi.org/10.30855/gmbd.0705055 |
| APA | ÇORLU T, Acar S (2023). Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. Gazi Mühendislik Bilimleri Dergisi, 9(1), 93 - 99. 10.30855/gmbd.0705055 |
| Chicago | ÇORLU TUGBA,Acar Selim Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. Gazi Mühendislik Bilimleri Dergisi 9, no.1 (2023): 93 - 99. 10.30855/gmbd.0705055 |
| MLA | ÇORLU TUGBA,Acar Selim Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. Gazi Mühendislik Bilimleri Dergisi, vol.9, no.1, 2023, ss.93 - 99. 10.30855/gmbd.0705055 |
| AMA | ÇORLU T,Acar S Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. Gazi Mühendislik Bilimleri Dergisi. 2023; 9(1): 93 - 99. 10.30855/gmbd.0705055 |
| Vancouver | ÇORLU T,Acar S Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method. Gazi Mühendislik Bilimleri Dergisi. 2023; 9(1): 93 - 99. 10.30855/gmbd.0705055 |
| IEEE | ÇORLU T,Acar S "Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method." Gazi Mühendislik Bilimleri Dergisi, 9, ss.93 - 99, 2023. 10.30855/gmbd.0705055 |
| ISNAD | ÇORLU, TUGBA - Acar, Selim. "Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method". Gazi Mühendislik Bilimleri Dergisi 9/1 (2023), 93-99. https://doi.org/10.30855/gmbd.0705055 |
