TY  - JOUR
TI  - Investigation Of Structural, Morphological And Electrical Properties Of $SnO_2$ Thin Film Grown by SILAR Method
AB  - Due  to  its  wide  band  gap  value  and  large  applications,  tin  dioxide  $(SnO_2)$  is  useful  multifunctional material. In this study, SnO2 thin film was grown by the Successive Ionic  Layer  Adsorption  and  Reaction  (SILAR)  method  for  40  cycles  on  the  silver  interdigital  contact. Structural and morphological properties were investigated by XRD, SEM, and UV  analysis. XRD analysis was taken using Cu Kα source in the range of 20- 80 two theta and it  was observed that the crystal structure was formed. SEM analysis showed that the $SnO_2$  material grew homogeneously on the glass surface. The Tauc graph was plotted using the  absorbance data. It was determined from the graph that the forbidden energy range was  3.81 eV. Urbach energy graph was also plotted which value was calculated as 0.46 eV. For  electrical characterization, I-V and resistivity measurements were also taken depending on  temperature  by  Keithley  2400  source  meter  and  Lakeshore  temperature  controller.  The  temperature-dependent  resistance  graph  was  plotted.  The  temperature-dependent  resistance  graph  showed  that  the  resistivity  decreased  with  increasing  temperature.  Activation  energies  were  calculated  by  drawing  the  temperature-dependent  Arhenius  graph.  The  results  showed  that  the   $SnO_2$  thin  film  could  be  used  in  future  electrical  applications.
AU  - ÇORLU, TUGBA
AU  - Acar, Selim
DO  - 10.30855/gmbd.0705055
PY  - 2023
JO  - Gazi Mühendislik Bilimleri Dergisi
VL  - 9
IS  - 1
SN  - 2149-4916
SP  - 93
EP  - 99
DB  - TRDizin
UR  - http://search/yayin/detay/1175466
ER  -