Yıl: 2018 Cilt: 39 Sayı: 3 Sayfa Aralığı: 728 - 733 Metin Dili: İngilizce DOI: 10.17776/csj.453576 İndeks Tarihi: 18-07-2019

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Öz:
In this work, MOVPE (Metalorganic Vapor Phase Epitaxy) growth and characterization studies of high Al content AlGaN epilayers are reported. We utilize high resolution X-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques to analyze the crystalline quality and surface morphology of AlGaN epilayers. The role of the growth temperature of AlGaN epilayers on the structural quality and the surface morphology was investigated. Growth and measurement results show that single phase AlGaN epilayers were grown on AlN/Al2O3 template. It is concluded that the increasing growth temperature increases the Al content of AlGaN epilayers which enable to control the alloy concentration of AlGaN. Furthermore, the increasing Al content in AlGaN epilayers leads to the smooth surface which indicates that the decreasing number of dislocation density.
Anahtar Kelime:

Konular: Nanobilim ve Nanoteknoloji

AlN/Al2O3 Şablonlar Üzerindeki Yüksek Al İçerikli AlGaN epi-Tabakaların Büyütme Sıcaklığı Bağımlılığı

Öz:
Bu çalışmada, yüksek Al içerikli AlGaN epi-tabakaların MOVPE (Metalorganik Buhar Fazı Epitaksi) büyütmesi ve karakterizasyon çalışmaları rapor edilmiştir. AlGaN epi-tabakaların kristal kalitesi ve yüzey morfolojisi analizi için yüksek çözünürlüklü X-ışını kırınımı (HRXRD) ve atomik kuvvet mikroskobu teknikleri kullanılmıştır. Büyütme sıcaklığının AlGaN epi-tabakalarının yapısal kalitesi ve yüzey morfolojisi üzerindeki rolü incelenmiştir. Büyütme ve ölçüm sonuçları AlN/Al2O3 şablonu üzerine tek fazda AlGaN epi-tabakaların büyütüldüğünü göstermektedir. Artan büyütme sıcaklığının AlGaN'in Al içeriğini arttırdığı ve bunun AlGaN alaşım konsantrasyonunu kontrol etmeye olanak sağladığı sonucuna varılmıştır. Ayrıca, AlGaN epi-tabakalarındaki Al içeriğinin artışı pürüzsüz yüzeye yol açar ki bu dislokasyon yoğunluğunun azaldığını belirtir.
Anahtar Kelime:

Konular: Nanobilim ve Nanoteknoloji
Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
  • Brunner F., Zettler J-T., Weyers M., Advanced in-situ control for III-nitride RF power device epitaxy, Semicond. Sci. Technol., 33 (2018) 045014.
  • Li K., Rakheja S., An analytic current-voltage model for quasi-ballistic III-nitride high electron mobility transistors, Journal of Applied Physics, 123 (2018) 184501.
  • Cordier Y., Comyn R., Frayssinet E., Khoury M., Lesecq M., Defrance N., De Jaeger J-C, Influence of AlN Growth Temperature on the Electrical Properties of Buffer Layers for GaN HEMTs on Silicon, Physica Status Solidi A, 215 (2018) 1700637.
  • Lee D., Lee J. W., Jang J., Shin I-S., Jin L., Park J. H., Kim J., Lee J., Noh H-S., Kim Y-I., Park Y., Lee G-D, Park Y., Kim J. K., Yoon E., Improved performance of AlGaN-based deep ultraviolet light-emitting diodes with nano-patterned AlN/sapphire substrates, Appl. Phys. Lett. 110 (2017), 191103.
  • Alias M. S., Tangi M., Holguin-Lerma J. A., Stegenburgs E., Alatawi A. A., Ashry I., Subedi R. C., Priante D., Shakfa M. K., Ng T. K., Ooi, B. S., Review of nanophotonics approaches using nanostructures and nanofabrication for III-nitrides ultraviolet-photonic devices, J. Nanophoton. 12 (4) (2018), 043508.
  • Wang W., Li Y., Zheng Y., Yang Z., Lin Z., Chen X., Lu Z., Li G., Performance-improved vertical GaN-based light-emitting diodes on Si substrates through designing the epitaxial structure CrystEngComm, 20 (2018) 4685-4693.
  • Laws E. A.,, Environmental Toxicology: Selected Entries from the Encyclopedia of Sustainability Science and Technology, Springer Science & Business Media, 2013.
  • Demir I., Robin Y., McClintock R., Elagoz S., Zekentes., Razeghi M., Direct growth of thick AlN layers on nanopatterned Si substrates by cantilever epitaxy, Phys. Status Solidi A 214 (4) (2017) 1600363.
  • Huang L., Li Y., Wang W., Li X., Zheng Y., Wang H., Zhang Z., Li G., Growth of high-quality AlN epitaxial film by optimizing the Si substrate surface, Applied Surface Science 435 (2018) 163–169.
  • Li Y., Wang W., Li X., Huang L., Zheng Y., Chen X., Li G., Nucleation layer design for growth of a high-quality AlN epitaxial film on a Si(111) substrate, CrystEngComm, 20 (2018) 1483-1490.
  • Tran B. T., Hirayama H., Growth and Fabrication of High External Quantum Efficiency AlGaN-Based Deep Ultraviolet Light-Emitting Diode Grown on Pattern Si Substrate, Scientific Reports 7 (2017) 12176.
  • Dai Q., Zhang X., Liang Z., Yang G., Wu Z., Chen S., Zhao J., Meng C., Wang J., Cui Y., Effects of indium surfactant on growth and characteristics of (1122) plane AlGaN-based multiple quantum wells, Optical Materials Express, 8 (2018) 24-29.
  • Yang W., Li J., Lin W., Li S., Chen H., Liu D., Yang X., Kang J., Control of two-dimensional growth of AlN and high Al-content AlGaN-based MQWs for deep-UV LEDs, AIP Advances 3 (2013), 052103.
  • Demir I., Li H., Robin Y., McClintock R., Elagoz S., Razeghi M., Sandwich method to grow high quality AlN by MOCVD, Journal of Physics D: Applied Physics 51 (8) (2018) 085104.
  • Shimanara Y., Miyake H., Hiramatsu K., Fukuyo F., Okada T., Takaoka H., Yoshida H., Growth of High-Quality Si-Doped AlGaN by Low-Pressure Metalorganic Vapor Phase Epitaxy, Japanese Journal of Applied Physics 50 (2011) 095502.
  • Funato M., Banal R. G. Kawakami Y., Screw dislocation-induced growth spirals as emissive exciton localization centers in Al-rich AlGaN/AlN quantum wells, AIP Advances 5 (2015) 117115.
  • Wang C., Wang X., Hu G., Wang J., Li J., Influence of Al content on electrical and structural properties of Si-doped AlxGa1–xN/GaN HEMT structures, Phys. Stat. Sol. (C) 3 (3) (2006) 486–489.
  • Lee, H. P., Perozek J., Rosario L. D., Bayram C., Investigation of AlGaN/GaN high electron mobility transistor structures on 200-mm silicon (111) substrates employing different buffer layer configurations, Sci. Rep. 6, (2016) 37588.
  • Massabuau F. C. P., Rhode S. L., Horton M. K., Hanlon T. J. O., Kovacs A., Zielinski M. S., Kappers M. J., Borkowski R. E. D., Humphreys C. J., Oliver R. A., Dislocations in AlGaN: Core Structure, Atom Segregation, and Optical Properties, Nano Lett., 17 (2017) 4846−4852.
APA DEMİR İ (2018). Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. , 728 - 733. 10.17776/csj.453576
Chicago DEMİR İlkay Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. (2018): 728 - 733. 10.17776/csj.453576
MLA DEMİR İlkay Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. , 2018, ss.728 - 733. 10.17776/csj.453576
AMA DEMİR İ Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. . 2018; 728 - 733. 10.17776/csj.453576
Vancouver DEMİR İ Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. . 2018; 728 - 733. 10.17776/csj.453576
IEEE DEMİR İ "Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates." , ss.728 - 733, 2018. 10.17776/csj.453576
ISNAD DEMİR, İlkay. "Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates". (2018), 728-733. https://doi.org/10.17776/csj.453576
APA DEMİR İ (2018). Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal, 39(3), 728 - 733. 10.17776/csj.453576
Chicago DEMİR İlkay Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal 39, no.3 (2018): 728 - 733. 10.17776/csj.453576
MLA DEMİR İlkay Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal, vol.39, no.3, 2018, ss.728 - 733. 10.17776/csj.453576
AMA DEMİR İ Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal. 2018; 39(3): 728 - 733. 10.17776/csj.453576
Vancouver DEMİR İ Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates. Cumhuriyet Science Journal. 2018; 39(3): 728 - 733. 10.17776/csj.453576
IEEE DEMİR İ "Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates." Cumhuriyet Science Journal, 39, ss.728 - 733, 2018. 10.17776/csj.453576
ISNAD DEMİR, İlkay. "Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates". Cumhuriyet Science Journal 39/3 (2018), 728-733. https://doi.org/10.17776/csj.453576