INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS
Yıl: 2018 Cilt: 19 Sayı: 4 Sayfa Aralığı: 976 - 981 Metin Dili: İngilizce DOI: 10.18038/aubtda.471568 İndeks Tarihi: 01-03-2020
INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS
Öz: Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonicshas been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB)induced Ga+ ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga+ ions during milling isstudied for a wide range of ion doses, ranging from about 1014 to 1017 ions/cm2, using X-ray photoelectron spectroscopy(XPS). Ion implantation is realized on identically sized areas for each dose by varying the FIB parameters such as dwell timeand loop number. It is found that the most of the Ga+ is within the first 50 nm of Si. This suggests that it can be possible topotentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealingand wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layercausing potentially high optical losses.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
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| APA | AY F (2018). INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. , 976 - 981. 10.18038/aubtda.471568 |
| Chicago | AY Feridun INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. (2018): 976 - 981. 10.18038/aubtda.471568 |
| MLA | AY Feridun INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. , 2018, ss.976 - 981. 10.18038/aubtda.471568 |
| AMA | AY F INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. . 2018; 976 - 981. 10.18038/aubtda.471568 |
| Vancouver | AY F INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. . 2018; 976 - 981. 10.18038/aubtda.471568 |
| IEEE | AY F "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS." , ss.976 - 981, 2018. 10.18038/aubtda.471568 |
| ISNAD | AY, Feridun. "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS". (2018), 976-981. https://doi.org/10.18038/aubtda.471568 |
| APA | AY F (2018). INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering, 19(4), 976 - 981. 10.18038/aubtda.471568 |
| Chicago | AY Feridun INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering 19, no.4 (2018): 976 - 981. 10.18038/aubtda.471568 |
| MLA | AY Feridun INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering, vol.19, no.4, 2018, ss.976 - 981. 10.18038/aubtda.471568 |
| AMA | AY F INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering. 2018; 19(4): 976 - 981. 10.18038/aubtda.471568 |
| Vancouver | AY F INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS. Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering. 2018; 19(4): 976 - 981. 10.18038/aubtda.471568 |
| IEEE | AY F "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS." Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering, 19, ss.976 - 981, 2018. 10.18038/aubtda.471568 |
| ISNAD | AY, Feridun. "INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS". Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering 19/4 (2018), 976-981. https://doi.org/10.18038/aubtda.471568 |
