TY  - JOUR
TI  - INVESTIGATION OF FOCUSED ION BEAM IMPLANTATION PROFILE OF Ga+ IONS FOR APPLICATIONS IN SILICON PHOTONICS
AB  - Use of focused ion beam (FIB) as a nanostructuring platform for fast prototype device development in the area of photonicshas been attracting a considerable interest. In this study, we report a systematic investigation of focused ion beam (FIB)induced Ga+ ion implantation in silicon on insulator (SOI) structures. The local implantation of Ga+ ions during milling isstudied for a wide range of ion doses, ranging from about 1014 to 1017 ions/cm2, using X-ray photoelectron spectroscopy(XPS). Ion implantation is realized on identically sized areas for each dose by varying the FIB parameters such as dwell timeand loop number. It is found that the most of the Ga+ is within the first 50 nm of Si. This suggests that it can be possible topotentially reduce optical losses caused by the ion implantation in any optical application. Methods such as thermal annealingand wet or dry chemical etching can result in removal of the 50 nm implanted layer of SOI, as a result removing the layercausing potentially high optical losses.
AU  - AY, Feridun
DO  - 10.18038/aubtda.471568
PY  - 2018
JO  - Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering
VL  - 19
IS  - 4
SN  - 2667-4211
SP  - 976
EP  - 981
DB  - TRDizin
UR  - http://search/yayin/detay/326965
ER  -