TY  - JOUR
TI  - Mosaic defects of AlN buffer layers in GaN/AlN/4H-SiC epitaxial structure
AB  - Structural properties of AlN buffer layers, grown by Metal Organic Chemical Vapor Deposition (MOCVD) on 4H-SiC substratewith thicknesses of 61.34, 116.88, 129.46 and 131.50 nm, are investigated by High Resolution X-Ray Diffraction (HR-XRD)technique. Interfacial roughness of AlN buffer layer was determined by XRR technique. The interface roughness value of 131.50nm thick sample is determined as 0.50 nm. Mosaic defects, tilt angle, vertical and lateral coherence lengths are characterized byHR-XRD technique. The edge and screw dislocations of the 131.50 nm thick sample are found as 2.98x1010 and 8.86x108cm-2respectively. The results indicate that 131.50 nm thick AlN buffer layer should be used in order to gain high performance inoptoelectronic terms in this study. Thus, optimization of AlN buffer layer thickness is extremely important in device performance.
AU  - Ataşer, Tuğçe
AU  - Ozcelik, Suleyman
AU  - DEMİR, D.
AU  - BİLGİLİ, Ahmet Kürşat
AU  - öztürk, mustafa kemal
DO  - 10.2339/politeknik.682649
PY  - 2021
JO  - Politeknik Dergisi
VL  - 24
IS  - 2
SN  - 1302-0900
SP  - 511
EP  - 516
DB  - TRDizin
UR  - http://search/yayin/detay/424264
ER  -