TY  - JOUR
TI  - TEMPERATURE DEPENDENT (83-483 K) RAMAN SPECTROSCOPY ANALYSIS OF CVD GROWN WS2 MONOLAYERS
AB  - For novel materials to be used in practical applications, their temperature dependent behavior and limitations need to beunderstood thoroughly. For example, the mobility of charge carriers, one of the important performance parameters intransistors, strongly depend on the change in the ambient temperature. Hence, characterization of potential optoelectronicmaterials at extreme temperatures is critical for future applications. In this study, we report on the changes of Raman scatteringspectra as the temperature is changed from 83 K to 483 K for the 2D transition metal dichalcogenide materials, namely WS2monolayers formed by chemical vapor deposition technique (CVD). Our results show that both E′ (E12g) and A1(A1g) modesred shift linearly as the temperature increases. The first order thermal coefficients have been calculated with the Grüneisenmodel, which suggests that in-plane mode is affected more by the increased temperature than that of out of plane mode. Thisdifference is attributed to the defects in the sample as the flakes are grown by the CVD method. We also investigated thetemperature dependence of the second order, 2LA(M) (at 345.7 cm-1) which is one of the most intense peaks in the spectra.
AU  - Oper, Merve
AU  - KOSKU PERKGOZ, NIHAN
DO  - 10.18038/estubtda.675907
PY  - 2020
JO  - Eskişehir Technical University Journal of Science and and Technology A- Applied Sciences and Engineering
VL  - 21
IS  - 1
SN  - 2667-4211
SP  - 155
EP  - 164
DB  - TRDizin
UR  - http://search/yayin/detay/434004
ER  -