TY  - JOUR
TI  - Fabrication and Characterization of Polyaniline and Polyaniline/Nanostructured-ZnO FET Hydrogen Gas Sensors
AB  - In this study, micron-sized Field Effect Transistor (FET) based sensors were produced using Polyaniline (PANI) channels. Pristine and nanostructured-ZnO added PANI was synthesized by free radical chemical oxidative polymerization method. FET production was carried out by producing PANI and PANI/nanostructured-ZnO composite channels on Si/SiO2 (285 nm) substrate by the optical lithography method. The electrical responses of the produced sensors against hydrogen (H2) gas were determined by measuring the source-drain current at 25 ˚C, 50 ˚C and 80 ˚C while applying the +20 V gate voltage to the transistors. It has been observed that PANI channel FET sensor detects H2 gas but adding nanostructured-ZnO into PANI improves the detection performance. Besides, unlike the PANI channel FET sensor, it has been determined that PANI/nanostructured-ZnO composite channel FET sensors operate with an excellent performance at room temperature.
AU  - OZBAY KARAKUS, MÜCELLA
AU  - Çetin, Hidayet
PY  - 2021
JO  - Erciyes Üniversitesi Fen Bilimleri Enstitüsü Dergisi
VL  - 37
IS  - 1
SN  - 1012-2354
SP  - 99
EP  - 109
DB  - TRDizin
UR  - http://search/yayin/detay/452511
ER  -