Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors
Yıl: 2021 Cilt: 14 Sayı: 2 Sayfa Aralığı: 825 - 836 Metin Dili: İngilizce DOI: 10.18185/erzifbed.923845 İndeks Tarihi: 02-03-2022
Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors
Öz: This paper mainly focused on one of the recent attractive electronic devices which is the ambipolar field-effect transistor. Ambipolarity has become important for many applications in recent years. Many factors that cause ambipolarity have been reported in the literature. However, the causes of ambipolarity have not been fully investigated so far. In this study, the degree of ambipolarity was determined as a function of the channel thickness for the WS2 FET device. For the WS2 FET device, the ambipolarity starts from a few layers of channel thickness, and then as the thickness increases, the ambipolarity begins to decrease again. It has been observed that as the thickness increases, the degree of ambipolarity approaches zero. The fact that the degree of ambipolarity approaches zero indicates that the WS2 channel exhibits natural n-type behavior and the ambipolarity effect disappears.
Anahtar Kelime: TMDC Tabanlı Alan Etkili Transistörlerde Ambipolaritenin Kanal Kalınlığına Bağımlılığının Araştırılması
Öz: Bu çalışmada ağırlıklı olarak güncel ambipolar alan etkili transistor üzerinde duruldu. Ambipolarite, son yıllarda birçok uygulama için önemli hale geldi. Literatürde ambipolariteye neden olan birçok faktör bildirilmiştir. Bununla birlikte, ambipolaritenin nedenleri literatürde tam olarak araştırılmamıştır. Bu çalışmada, ambipolarite derecesi, WS2 FET cihazı için kanal kalınlığının bir fonksiyonu olarak belirlenmiştir. Kalınlık arttıkça ambipolarite derecesinin sıfıra yaklaştığı görülmüştür. Ambipolarite derecesinin sıfıra yaklaşması, WS2 kanalının doğal n-tipi davranış sergilediğini ve ambipolarite etkisinin ortadan kalktığını gösterir.
Anahtar Kelime: Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık
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| APA | ACAR M, Ertugrul M (2021). Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. , 825 - 836. 10.18185/erzifbed.923845 |
| Chicago | ACAR MERVE,Ertugrul Mehmet Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. (2021): 825 - 836. 10.18185/erzifbed.923845 |
| MLA | ACAR MERVE,Ertugrul Mehmet Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. , 2021, ss.825 - 836. 10.18185/erzifbed.923845 |
| AMA | ACAR M,Ertugrul M Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. . 2021; 825 - 836. 10.18185/erzifbed.923845 |
| Vancouver | ACAR M,Ertugrul M Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. . 2021; 825 - 836. 10.18185/erzifbed.923845 |
| IEEE | ACAR M,Ertugrul M "Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors." , ss.825 - 836, 2021. 10.18185/erzifbed.923845 |
| ISNAD | ACAR, MERVE - Ertugrul, Mehmet. "Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors". (2021), 825-836. https://doi.org/10.18185/erzifbed.923845 |
| APA | ACAR M, Ertugrul M (2021). Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 14(2), 825 - 836. 10.18185/erzifbed.923845 |
| Chicago | ACAR MERVE,Ertugrul Mehmet Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi 14, no.2 (2021): 825 - 836. 10.18185/erzifbed.923845 |
| MLA | ACAR MERVE,Ertugrul Mehmet Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi, vol.14, no.2, 2021, ss.825 - 836. 10.18185/erzifbed.923845 |
| AMA | ACAR M,Ertugrul M Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 2021; 14(2): 825 - 836. 10.18185/erzifbed.923845 |
| Vancouver | ACAR M,Ertugrul M Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors. Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi. 2021; 14(2): 825 - 836. 10.18185/erzifbed.923845 |
| IEEE | ACAR M,Ertugrul M "Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors." Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 14, ss.825 - 836, 2021. 10.18185/erzifbed.923845 |
| ISNAD | ACAR, MERVE - Ertugrul, Mehmet. "Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors". Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi 14/2 (2021), 825-836. https://doi.org/10.18185/erzifbed.923845 |
