TY  - JOUR
TI  - Investigation of the Dependence of Ambipolarity on Channel Thickness for TMDC Based Field Effect Transistors
AB  - This paper mainly focused on one of the recent attractive electronic devices which is the ambipolar field-effect transistor. Ambipolarity has become important for many applications in recent years. Many factors that cause ambipolarity have been reported in the literature. However, the causes of ambipolarity have not been fully investigated so far. In this study, the degree of ambipolarity was determined as a function of the channel thickness for the WS2 FET device. For the WS2 FET device, the ambipolarity starts from a few layers of channel thickness, and then as the thickness increases, the ambipolarity begins to decrease again. It has been observed that as the thickness increases, the degree of ambipolarity approaches zero. The fact that the degree of ambipolarity approaches zero indicates that the WS2 channel exhibits natural n-type behavior and the ambipolarity effect disappears.
AU  - Ertugrul, Mehmet
AU  - ACAR, MERVE
DO  - 10.18185/erzifbed.923845
PY  - 2021
JO  - Erzincan Üniversitesi Fen Bilimleri Enstitüsü Dergisi
VL  - 14
IS  - 2
SN  - 1307-9085
SP  - 825
EP  - 836
DB  - TRDizin
UR  - http://search/yayin/detay/479970
ER  -