TY  - JOUR
TI  - The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures
AB  - Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.
AU  - ALTUNTAS, ISMAIL
AU  - ELAGOZ, Sezai
DO  - 10.46460/ijiea.898795
PY  - 2021
JO  - International Journal of Innovative Engineering Applications
VL  - 5
IS  - 1
SN  - 2587-1943
SP  - 6
EP  - 10
DB  - TRDizin
UR  - http://search/yayin/detay/526929
ER  -