Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs

Osman TANRIVERDİ, (TÜBİTAK, Raylı Ulaşım Teknolojileri Enstitüsü, Kocaeli, Türkiye)
Deniz YILDIRIM (İstanbul Teknik Üniversitesi, Elektrik Elektronik Fakültesi, Elektrik Mühendisliği Bölümü, İstanbul, Türkiye)
Turkish Journal of Electrical Engineering and Computer Sciences
13 0
Yıl: 2022 Cilt: 30 Sayı: 3 Sayfa Aralığı: 487 - 501 Metin Dili: İngilizce DOI: 10.3906/elk-2103-31 İndeks Tarihi: 01-07-2022

Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs

Öz:
As the insulated gate bipolar transistor (IGBT) modules have their own specific characteristic switching forms, their turn-on and turn-off times are changed according to practical applications. For the conventional gate drives, gate resistors are used to adjust the turn-on and turn-off times which change switching losses that have a significant amount in total losses. Collector current rate of change, diC /dt and collector-emitter rate of change, dvCE/dt are dependent on each other and they affect operating parameters in high power converters. Relations between current and voltages during the switching transitions are given and effects of the changes in electrical parameters for the operation of IGBT are described. Thereafter, closed-loop gate drive with analog control that performs independent control of diC /dt and dvCE/dt of a new generation IGBT module platform for high power applications is proposed. Unlike conventional gate drives, proposed closed-loop drive makes constant diC /dt possible while dvCE/dt is decreased to increase the efficiency of the power conversion system. This leads to decrease of the switching losses without changing the electromagnetic interference (EMI), IGBT voltage, and current stresses which are related with the rate of change of collector current. Simulations are performed in a double pulse test circuit in which new package next high power density dual (nHPD2) family MBM450FS33F Hitachi dual IGBT with 3300V 450A ratings is modelled.
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  • [1] Chen G, Wang Y, Cai X, Igarashi S. Adaptive digital drive for high power and voltage IGBT in multi-MW wind power converter. In: Proceedings of The 7th International Power Electronics and Motion Control Conference; Harbin, China; 2012. doi: 10.1109/IPEMC.2012.6259033
  • [2] Lai J, Hefner A, Maitra A, Goodman F. Characterization of a multilevel HV-IGBT module for distribution applications. IEEE Industry Applications Conference Forty-First IAS Annual Meeting 2006. doi: 10.1109/IAS.2006.256610
  • [3] Lai J, Leslie L, Ferrell J, Nergaard T. Characterization of HV-IGBT for High-Power Inverter Applications. In: Fourtieth IAS Annual Meeting. Conference Record of the 2005 Industry Applications Conference; Kowloon, Hong Kong, China; 2005. doi: 10.1109/IAS.2005.1518335
  • [4] Reigosa PD, Wu R, Iannuzzo F, Blaabjerg F. Evidence of Gate Voltage Oscillations during Short Circuit of Commercial 1.7 kV / 1 kA IGBT Power Modules. In: PCIM International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management; Nuremberg, Germany; 2015.
  • [5] Fink K, Bernel S. Advanced Gate Drive Unit With Closed-Loop di / dt Control. IEEE Transactions on Power Electronics; 28 (5); 2013. pp 2587 - 2595. doi: 10.1109/TPEL.2012.2215885
  • [6] Chen L, Peng FZ. Closed-Loop Gate Drive for High Power IGBTs. In: Twenty-Fourth Annual IEEE Applied Power Electronics Conference and Exposition; Washington, DC, USA; 2009. doi: 10.1109/APEC.2009.4802837
  • [7] Oberdieck K, Schuch S, DeDoncker RW. Short circuit detection using the gate charge characteristic for Trench/Fieldstop-IGBTs.In: 18th European Conference on Power Electronics and Applications; Karlsruhe, Germany; 2016. doi: 10.1109/EPE.2016.7695402
  • [8] Khanna VK. IGBT Theory and Design. New York, NY, USA: IEEE Press, 2003.
  • [9] Muhammad HR. Power Electronics-Circuits, Devices, and Applications. 3rd edition, Upper Saddle River, NJ, Pearson Prentice Hall, 2004.
  • [10] Kagerbauer JD, Jahns TM. Development of an Active dv/dt Control Algorithm for Reducing Inverter Conducted EMI with Minimal Impact on Switching Losses. In: IEEE Power Electronics Specialists Conference; Orlando, FL, USA; 2007. doi: 10.1109/PESC.2007.4342107
  • [11] Schmitt G, Kennel R, Holtz J. Voltage gradient limitation of IGBTS by optimised gate-current profiles. In: IEEE Power Electronics Specialists Conference; Rhodes, Greece; 2008. doi: 10.1109/PESC.2008.4592512
  • [12] Takizawa S, Igarashi, Kuroki K. A novel gate drive circuit for low-loss system using IGBT saturation voltage characteristics. 13th International Symposium on Power Semiconductor Devices and ICs; Osaka, Japan; 2001. doi: 10.1109/ISPSD.2001.934633
  • [13] Cacciato M, Consoli A, Frascodore G, Testa A, Gianninni G et al. Driving optimization of IGBT devices for traction applications. European Conference on Power Electronics and Applications; Dresden, Germany; 2005. doi: 10.1109/EPE.2005.219641
  • [14] Liu Z, Zhou D, Sun K, Huang L, Matsuse K et al. A novel driving and protection circuit for reverse blocking IGBT used in matrix converter. IEEE Industry Applications Conference; Seattle, WA, USA; 2004. doi: 10.1109/IAS.2004.1348730
  • [15] Wang Z, Shi X, Tolbert LM, Wang F, Blalock BJ. A di/dt feedback-based active gate driver for smart switching and fast overcurrent protection of IGBT modules. IEEE Transactions on Power Electronics; 29 (7); 2014. pp 3720-3732. doi: 10.1109/TPEL.2013.2278794
  • [16] Shu L, Zhang J, Peng F, Chen Z. Active Current Source IGBT Gate Drive With Closed-Loop di/dt and dv/dt Control. IEEE Transactions on Power Electronics; 32 (5); 2017. pp 3787-3796. doi: 10.1109/TPEL.2016.2587340
  • [17] Schmitt G, Kennel R, Holtz J. Voltage gradient limitation of IGBTs by optimised gate-current profile. In: IEEE Power Electronics Specialists Conference; Rhodes, Greece; 2008. doi: 10.1109/PESC.2008.4592512
  • [18] Rose M, Krupar J, Hauswald H. Adaptive dv/dt and di/dt control for isolated gate power devices.In: IEEE Energy Conversion Congress and Exposition; Atlanta, GA, USA; 2010. doi: 10.1109/ECCE.2010.5617892
  • [19] Baraia I, Barrena JA, Abad G, Segade JMC, Iraola U. An Experimentally Verified Active Gate Control Method for the Series Connection of IGBT/Diodes. IEEE Transactions on Power Electronics; 27 (2); 2012. pp 1025 - 1038. doi: 10.1109/TPEL.2011.2161336
  • [20] Wittig B, Fuchs FW. Analysis and Comparison of Turn-off Active Gate Control Methods for Low-Voltage Power MOSFETs With High Current Ratings. IEEE Transactions on Power Electronics; 27 (3); 2012. doi: 10.1109/TPEL.2011.2162531
  • [21] Zhang F, Ren Y, Tian M, Yang X. A novel active gate drive for HV-IGBTs using feed-forward gate charge control strategy. In: IEEE Energy Conversion Congress and Exposition (ECCE); Montreal, QC, Canada; 2015. doi: 10.1109/ECCE.2015.7310641
  • [22] Shu L, Zhang J, Shao S. Crosstalk Analysis and Suppression for a Closed-Loop Active IGBT Gate Driver. IEEE Journal of Emerging and Selected Topics in Power Electronics; 7 (3); 2019. doi: 10.1109/JESTPE.2018.2869678
  • [23] Shu L, Zhang J, Peng F, Chen Z. A voltage controlled current source gate drive method for IGBT devices. In: IEEE Energy Conversion Congress and Exposition (ECCE); Pittsburgh, PA, USA; 2014. doi: 10.1109/ECCE.2014.6954158
  • [24] Shu L, Zhang J, Peng F, Chen Z. Active Current Source IGBT Gate Drive With Closed-Loop di/dt and dv/dt Control. IEEE Transactions on Power Electronics; 32 (5); 2017. pp 3787-3796. doi: 10.1109/TPEL.2016.2587340
  • [25] Du X, Chen Q, Li G, Hu C, Ye Q. Closed loop control method of turn-on di/dt and turn-off du/dt for insulated gate bipolar transistors. In: 12th IEEE Conference on Industrial Electronics and Applications (ICIEA); Siem Reap, Cambodia; 2017. doi: 10.1109/ICIEA.2017.8283099
  • [26] Zhang F, Yang X, Ren Y, Feng L, Chen W et al. Advanced Active Gate Drive for Switching Performance Improvement and Overvoltage Protection of High-Power IGBTs. IEEE Transactions on Power Electronics; 33 (5); 2018. doi: 10.1109/TPEL.2017.2716370
  • [27] Idir N, Bausiere R, Franchaud JJ. Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors. IEEE Transactions on Power Electronics; 21 (4); 2006. doi: 10.1109/TPEL.2007.876895
  • [28] Ling Y, Zhao Z, Zhu Y. A Self-Regulation Gate Driver for High-Power IGBTs. IEEE Transactions on Power Electronics; 36 (3); 2021. doi:10.1109/TPEL.2020.3015924
  • [29] Kuhn H, Koneke T, Mertens A. Potential of Digital Gate Units in High Power Appliations. In: 13th EPE-PEMC Power Electronics and Motion Control Conference;Poznan, Poland; 2008. doi:10.1109/EPEPEMC.2008.4635473
  • [30] Handt K, Köhler H, Hiller M, Sommer R. Fully Digitally Controlled Gate Drive Unit for High Power IGBTs. In: PCIM Europe Conference; Nuremberg, Germany; 2012.
  • [31] Blank M, Glück T, Kugi A, Kreuter HP. Slew rate control strategies for smart power ICs based on iterative learning control. In: IEEE Applied Power Electronics Conference and Exposition - APEC; Fort Worth, TX, USA; 2014. doi: 10.1109/APEC.2014.6803710
  • [32] Dang L, Kuhn H, Mertens A. Digital Adaptive Driving Strategies for High-Voltage IGBTs. IEEE Transactions on Industry Applications; 49 (4); 2013. doi: 10.1109/TIA.2013.2257638
  • [33] Groeger J, Schindler A, Wicht B, Norling K. Optimized dv/dt, di/dt sensing for a digitally controlled slope shaping gate driver. In: IEEE Applied Power Electronics Conference and Exposition (APEC); Tampa, FL, USA; 2017. doi: 10.1109/APEC.2017.7931209
  • [34] Chen G, Wang Y, Cai X, Igarashi S. Adaptive Digital Drive for High Power and Voltage IGBT in Multi-MW Wind Power Converter. In: IEEE 7th International Power Electronics and Motion Control Conference - ECCE Asia; Harbin, China; 2012. doi: 10.1109/IPEMC.2012.6259033
  • [35] Groeger J, Wicht B, Norling K. Dynamic stability of a closed-loop gate driver enabling digitally controlled slope shaping. In: 13th Conference on Ph.D. Research in Microelectronics and Electronics (PRIME); Giardini Naxos, Italy; 2017. doi: 10.1109/PRIME.2017.7974107
  • [36] Liangdeng H, Yulin C, Sheng A. A new two feed-back control method integrated in digital gate driver for large power IGBT. In: IEEE Information Technology, Networking, Electronic and Automation Control Conference; Chongqing, China; 2016. doi: 10.1109/ITNEC.2016.7560546
  • [37] Wang R, Liang L, Chen Y, Pan Y, Li J et al. Self-Adaptive Active Gate Driver for IGBT Switching Performance Optimization Based on Status Monitoring. IEEE Transactions on Power Electronics; 35 (6); 2020. doi:10.1109/TPEL.2019.2947268
  • [38] Chen L, Ge B, Peng FZ. Modeling and analysis of closed-loop gate drive. In: Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC); Palm Springs, CA, USA; 2010. doi: 10.1109/APEC.2010.5433360
  • [39] Wang Y, Palmer PR, Bryant AT, Finney SJ, Abu-Khaizaran MS et al. An Analysis of High-Power IGBT Switching Under Cascade Active Voltage Control. IEEE Transactions on Industry Applications; 45 (2); 2009. pp 861 - 870. doi: 10.1109/TIA.2009.2013595
  • [40] Wang Y, Palmer PR, Lim TC, Finney SJ, Bryant AT. Real-time optimization of IGBT/diode cell switching under active voltage control. In: IEEE Industry Applications Conference Forty-First IAS Annual Meeting; Tampa, FL, USA; 2006. doi: 10.1109/IAS.2006.256857
  • [41] Lim TC, Williams BW, Finney SJ, Palmer PR. Series-Connected IGBTs Using Active Voltage Control Technique. IEEE Transactions on Power Electronics; 28 (8); 2013. doi: 10.1109/TPEL.2012.2227812
  • [42] Palmer PR, Yang X, He W. Dead-time minimisation using active voltage control gate drive for high-power IGBT converters. In: 38th Annual Conference on IEEE Industrial Electronics Society; Montreal, QC, Canada; 2012. doi: 10.1109/IECON.2012.6388624
  • [43] Yang X, Yuan Y, zhang X, Palmer PR. Shaping High-Power IGBT Switching Transitions by Active Voltage Control for Reduced EMI Generation. IEEE Transactions on Industry Applications; 51 (2); 2015. doi: 10.1109/TIA.2014.2347578
  • [44] Lobsiger Y, Kolar JM. Closed-Loop di/dt and dv/dt IGBT Gate Driver. IEEE Transactions on Power Electronics; 30 (6); 2015. doi: 10.1109/TPEL.2014.2332811
  • [45] Lobsiger Y, Kolar JM. Stability and robustness analysis of d/dt-closed-loop IGBT gate drive. In: Twenty-Eighth Annual IEEE Applied Power Electronics Conference and Exposition (APEC); Long Beach, CA, USA; 2013.
  • [46] Lobsiger Y. Closed-Loop IGBT Gate Drive and Current Balancing Concepts. PhD, ETH Zürich, Switzerland, 2014.
APA Tanrıverdi O, YILDIRIM D (2022). Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . , 487 - 501. 10.3906/elk-2103-31
Chicago Tanrıverdi Osman,YILDIRIM Deniz Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . (2022): 487 - 501. 10.3906/elk-2103-31
MLA Tanrıverdi Osman,YILDIRIM Deniz Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . , 2022, ss.487 - 501. 10.3906/elk-2103-31
AMA Tanrıverdi O,YILDIRIM D Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . . 2022; 487 - 501. 10.3906/elk-2103-31
Vancouver Tanrıverdi O,YILDIRIM D Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . . 2022; 487 - 501. 10.3906/elk-2103-31
IEEE Tanrıverdi O,YILDIRIM D "Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs ." , ss.487 - 501, 2022. 10.3906/elk-2103-31
ISNAD Tanrıverdi, Osman - YILDIRIM, Deniz. "Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs ". (2022), 487-501. https://doi.org/10.3906/elk-2103-31
APA Tanrıverdi O, YILDIRIM D (2022). Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . Turkish Journal of Electrical Engineering and Computer Sciences, 30(3), 487 - 501. 10.3906/elk-2103-31
Chicago Tanrıverdi Osman,YILDIRIM Deniz Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . Turkish Journal of Electrical Engineering and Computer Sciences 30, no.3 (2022): 487 - 501. 10.3906/elk-2103-31
MLA Tanrıverdi Osman,YILDIRIM Deniz Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . Turkish Journal of Electrical Engineering and Computer Sciences, vol.30, no.3, 2022, ss.487 - 501. 10.3906/elk-2103-31
AMA Tanrıverdi O,YILDIRIM D Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . Turkish Journal of Electrical Engineering and Computer Sciences. 2022; 30(3): 487 - 501. 10.3906/elk-2103-31
Vancouver Tanrıverdi O,YILDIRIM D Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs . Turkish Journal of Electrical Engineering and Computer Sciences. 2022; 30(3): 487 - 501. 10.3906/elk-2103-31
IEEE Tanrıverdi O,YILDIRIM D "Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs ." Turkish Journal of Electrical Engineering and Computer Sciences, 30, ss.487 - 501, 2022. 10.3906/elk-2103-31
ISNAD Tanrıverdi, Osman - YILDIRIM, Deniz. "Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs ". Turkish Journal of Electrical Engineering and Computer Sciences 30/3 (2022), 487-501. https://doi.org/10.3906/elk-2103-31
Sayfa Oluşturulma Tarihi
23-04-2024 23:43

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