TY - JOUR
TI - Independent closed loop control of di⁄dt and dv⁄dt for high power IGBTs
AB - As the insulated gate bipolar transistor (IGBT) modules have their own specific characteristic switching forms,
their turn-on and turn-off times are changed according to practical applications. For the conventional gate drives, gate
resistors are used to adjust the turn-on and turn-off times which change switching losses that have a significant amount
in total losses. Collector current rate of change, diC /dt and collector-emitter rate of change, dvCE/dt are dependent
on each other and they affect operating parameters in high power converters. Relations between current and voltages
during the switching transitions are given and effects of the changes in electrical parameters for the operation of IGBT
are described. Thereafter, closed-loop gate drive with analog control that performs independent control of diC /dt and
dvCE/dt of a new generation IGBT module platform for high power applications is proposed. Unlike conventional gate
drives, proposed closed-loop drive makes constant diC /dt possible while dvCE/dt is decreased to increase the efficiency
of the power conversion system. This leads to decrease of the switching losses without changing the electromagnetic
interference (EMI), IGBT voltage, and current stresses which are related with the rate of change of collector current.
Simulations are performed in a double pulse test circuit in which new package next high power density dual (nHPD2)
family MBM450FS33F Hitachi dual IGBT with 3300V 450A ratings is modelled.
AU - Tanrıverdi, Osman
AU - YILDIRIM, Deniz
DO - 10.3906/elk-2103-31
PY - 2022
JO - Turkish Journal of Electrical Engineering and Computer Sciences
VL - 30
IS - 3
SN - 1300-0632
SP - 487
EP - 501
DB - TRDizin
UR - http://search/yayin/detay/528611
ER -