The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

ALTUNTAS, ISMAIL; ELAGOZ, Sezai

doi:10.46460/ijiea.898795

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

İsmail ALTUNTAS, (Sivas Cumhuriyet Üniversitesi, Nanoteknoloji Mühendisliği Bölümü, Sivas, Türkiye)

Sezai ELAGÖZ (ASELSAN-Mikroelektronik, Güdüm ve Elektro-Optik, Ankara, Türkiye)

International Journal of Innovative Engineering Applications

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Yıl: 2021 Cilt: 5 Sayı: 1 Sayfa Aralığı: 6 - 10 Metin Dili: İngilizce DOI: 10.46460/ijiea.898795 İndeks Tarihi: 29-07-2022

The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures

Öz:

Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.

Anahtar Kelime: Epitaxy Gallium nitride Characterization Metal organic vapor phase epitaxy

Belge Türü: Makale Makale Türü: Araştırma Makalesi Erişim Türü: Erişime Açık

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APA	ALTUNTAS I, ELAGOZ S (2021). The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. , 6 - 10. 10.46460/ijiea.898795
Chicago	ALTUNTAS ISMAIL,ELAGOZ Sezai The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. (2021): 6 - 10. 10.46460/ijiea.898795
MLA	ALTUNTAS ISMAIL,ELAGOZ Sezai The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. , 2021, ss.6 - 10. 10.46460/ijiea.898795
AMA	ALTUNTAS I,ELAGOZ S The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. . 2021; 6 - 10. 10.46460/ijiea.898795
Vancouver	ALTUNTAS I,ELAGOZ S The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. . 2021; 6 - 10. 10.46460/ijiea.898795
IEEE	ALTUNTAS I,ELAGOZ S "The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures." , ss.6 - 10, 2021. 10.46460/ijiea.898795
ISNAD	ALTUNTAS, ISMAIL - ELAGOZ, Sezai. "The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures". (2021), 6-10. https://doi.org/10.46460/ijiea.898795

APA	ALTUNTAS I, ELAGOZ S (2021). The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. International Journal of Innovative Engineering Applications, 5(1), 6 - 10. 10.46460/ijiea.898795
Chicago	ALTUNTAS ISMAIL,ELAGOZ Sezai The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. International Journal of Innovative Engineering Applications 5, no.1 (2021): 6 - 10. 10.46460/ijiea.898795
MLA	ALTUNTAS ISMAIL,ELAGOZ Sezai The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. International Journal of Innovative Engineering Applications, vol.5, no.1, 2021, ss.6 - 10. 10.46460/ijiea.898795
AMA	ALTUNTAS I,ELAGOZ S The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. International Journal of Innovative Engineering Applications. 2021; 5(1): 6 - 10. 10.46460/ijiea.898795
Vancouver	ALTUNTAS I,ELAGOZ S The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures. International Journal of Innovative Engineering Applications. 2021; 5(1): 6 - 10. 10.46460/ijiea.898795
IEEE	ALTUNTAS I,ELAGOZ S "The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures." International Journal of Innovative Engineering Applications, 5, ss.6 - 10, 2021. 10.46460/ijiea.898795
ISNAD	ALTUNTAS, ISMAIL - ELAGOZ, Sezai. "The GaN Epilayer Grown by MOVPE: Effect of The Different Nucleation Layer Temperatures". International Journal of Innovative Engineering Applications 5/1 (2021), 6-10. https://doi.org/10.46460/ijiea.898795